STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 description STP7401 is the p-channel logic enhancement mo de power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin configuration sot-323 (sc-70) 1.gate 2.source 3.drain part marking sot-323 y: year code a: process code ordering information part number package part marking STP7401s32rg sot-323 01yw process code : a ~ z ; a ~ z st7401s32rg s32 : sot-23-3l ; r : tape reel ; g : pb ? free feature z - 30v/-2.8a, r ds(on) = 115m @v gs = -10v z -30v/-2.5a, r ds(on) = 135m @v gs = -4.5v z -30v/-1.5a, r ds(on) = 170m @v gs = -2.5v z -30v/-1.0a, r ds(on) = 240m @v gs = -1.8v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-323 (sc-70) package design 3 1 2 d g s 3 1 2 01yw
STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -30 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d -2.8 -2.1 a pulsed drain current i dm -8 a continuous source current (diode conduction) i s -1.4 a power dissipation t a =25 t a =70 p d 0.33 0.21 w operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 105 /w
STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.4 -1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =85 -5 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v -4.0 a drain-source on-resistance r ds(on) v gs =-10v,i d =-2.8a v gs =-4.5v,i d =-2.5a v gs =-2.5v,i d =-1.5a v gs =-1.8v,i d =-1.0a 105 125 155 210 115 135 170 240 m forward transconductance g fs v ds =-5v,i d =-4.0v 4 s diode forward voltage v sd i s =-1.0a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 5.8 gate-source charge q gs 0.8 gate-drain charge q gd v ds =-15v v gs =-4.5v i d ? -2.0a 1.5 nc input capacitance c iss 380 output capacitance c oss 55 reverse transfer capacitance c rss v ds =-15v v gs =0v f=1mh z 40 pf 6 turn-on time t d(on) tr 3.9 40 turn-off time t d(off) tf v ds =-15v i d =-1a r l =15 r g =-3 v gen =-10v 15 ns
STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 typical characterictics (25 unless otherwise noted)
STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 typical characterictics (25 unless otherwise noted)
STP7401 p channel enhancement mode mosfet -2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP7401 2005. v1 sot-323 package outline
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